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| SHINDENGEN Schottky Rectifiers (SBD) Single D1FS6 60V 1.1A FEATURES *oe Small SMT *oe Tj150*Z Tj150 = *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication OUTLINE DIMENSIONS Case : 1F Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 60 V Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 65 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=25*Z*@On alumina substrate A IO 1.1 50Hz sine wave, R-load Ta=25*Z*@On glass-epoxy substrate 0.82 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z A 40 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z W PRRSM 60 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage =1.1A, Pulse measurement VF IF Reverse Current IR V=V , R RM Pulse measurement Junction Capacitance Cj f=1MHz,R V =10V junction to lead AEjl Thermal Resistance AEja junction to ambient*@On alumina substrate junction to ambient*@On glass-epoxy substrate Ratings Unit Max.0.58 V Max.1 mA Typ.50 pF Max.23 Max.108 *Z/W Max.157 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D1FS6 Forward Voltage 10 Forward Current IF [A] 1 Tl=150C [MAX] Tl=150C [TYP] 0.1 Tl=25C [MAX] Tl=25C [TYP] Pulse measurement per diode 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D1FS6 Junction Capacitance f=1MHz Tl=25C TYP per diode 1000 100 Junction Capacitance Cj [pF] 10 1 0.1 1 10 Reverse Voltage VR [V] D1FS6 1000 Reverse Current 100 Tl=150C [MAX] Tl=150C [TYP] Reverse Current IR [mA] 10 Tl=125C [TYP] Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 20 40 60 80 100 Reverse Voltage VR [V] D1FS6 4 3.5 Reverse Power Dissipation Reverse Power Dissipation PR [W] 3 2.5 2 DC D=0.05 0.1 0.2 0.3 0.5 1.5 1 0.5 0 SIN 0.8 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D1FS6 1.4 Forward Power Dissipation Forward Power Dissipation PF [W] 1.2 DC 1 SIN 0.5 D=0.8 0.8 0.2 0.6 0.05 0.1 0.3 0.4 0.2 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D1FS6 2 Derating Curve Average Rectified Forward Current IO [A] DC D=0.8 1.5 0.5 SIN 1 0.3 0.2 0.1 0.5 0.05 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T D1FS6 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 DC 1.2 D=0.8 1 0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 0.5 SIN 0.3 0.6 0.2 0.4 0.2 0 0.1 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T D1FS6 60 Peak Surge Forward Capability IFSM 10ms 10ms 50 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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